gan hemt power transistor 100w peak, 1.2 - 2.0 ghz magx - 001220 - 100l00 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. production v1 19 sept 11 features ? gan depletion mode hemt microwave transistor ? common source configuration ? broadband class ab operation ? thermally enhanced cu/mo/cu package ? rohs compliant ? +50v typical operation ? mttf of 114 years (channel temperature < 200c) applications general purpose for pulsed or cw applications ? commercial wireless infrastructure - wcdma, lte, wimax ? civilian and military radar ? military and commercial communications ? public radio ? industrial, scientific and medical ? satcom ? instrumentation ? dtv product description the magx - 001220 - 100l00 is a gold metalized gallium nitride (gan) on silicon carbide rf power transistor suitable for a variety of rf power amplifier applications. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for todays demanding application needs. the magx - 001220 - 100l00 is constructed using a thermally enhanced cu/mo/cu flanged ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. typical cw rf performance freq. (mhz) pin (w peak) pout (w peak) gain (db) id - pk (a) eff (%) 1200 4 120 14.8 4.0 60 1400 4 120 14.8 4.6 52 1600 4 130 15.1 4.9 53 1800 4 120 14.8 4.4 54 2000 4 120 14.8 4.5 53 ordering information magx - 001220 - 100l00 100w gan power transistor magx - 001220 - 1sb1ppr evaluation board
gan hemt power transistor 100w peak, 1.2 - 2.0 ghz magx - 001220 - 100l00 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. production v1 19 sept 11 parameter test conditions symbol min typ max units dc characteristics drain - source leakage current v gs = - 8v, v ds = 175v i ds - - 6 ma gate threshold voltage v ds = 5v, i d = 15.0ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5v, i d = 3.5a g m 2.5 - - s dynamic characteristics input capacitance not applicable input internally matched n/a n/a n/a n/a pf output capacitance v ds = 50v, v gs = - 8v, f = 1mhz c oss - 30.3 35 pf feedback capacitance v ds = 50v, v gs = - 8v, f = 1mhz c rss - 2.8 5.4 pf absolute maximum ratings table (1, 2, 3) supply voltage (vdd) +65v supply voltage (vgg) - 8 to 0v supply current (id1) 9a pk input power (pin) +38 dbm absolute max. junction/channel temp 200 oc pulsed power dissipation (pavg) at 85 oc 105 w mttf (t j <200c) 114 years thermal resistance, (tchannel = 200 oc) v dd = 50v, i dq = 100ma, pout = 100w 300us pulse / 10% duty 0.84 oc/w operating temp - 40 to +95c storage temp - 65 to +150c esd min. - machine model (mm) 50 v esd min. - human body model (hbm) >250 v msl level msl1 (1) operation of this device above any one of these parameters may cause permanent damage. (2) channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize lifetime. (3) for saturated performance it recommended that the sum of (3*vdd + abs(vgg)) <175
gan hemt power transistor 100w peak, 1.2 - 2.0 ghz magx - 001220 - 100l00 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. production v1 19 sept 11 electrical specifications: t c = 25 5c ( room ambient ) test fixture impedance parameter test conditions symbol min typ max units rf functional tests vdd=50v, idq=500ma (pulsed), f=1.2 2.0 ghz, pulse=300us, duty=10% output power pin = 4w peak, 0.4w ave p out 100 110 - w peak power gain pout = 100w peak, 10w ave g p 14.0 14.8 - db drain efficiency pin = 4w peak, 0.4w ave d 50 55 - % load mismatch stability pin = 4w peak, 0.4w ave vswr - s 5:1 - - - load mismatch tolerance pin = 4w peak, 0.4w ave vswr - t 10:1 - - - f (mhz) z if ( ) z of ( ) 1200 3.82 - j2.85 8.6 + j1.1 1400 4.17 - j1.79 6.9 + j0.16 1600 4.69 - j2.15 6.8 + j0.7 1800 3.53 - j2.79 6.1 - j0.6 2000 2.19 - j1.90 3.2 + j0.39 i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan hemt power transistor 100w peak, 1.2 - 2.0 ghz magx - 001220 - 100l00 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. production v1 19 sept 11 rf power transfer curve power gain vs. output power return loss vs. frequency rf power transfer curve 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 pin(w) pout(w) 1.2ghz 1.6ghz 2.0ghz 10 11 12 13 14 15 16 17 18 0 20 40 60 80 100 120 140 160 pout(w) gain(db) 1.2ghz 1.6ghz 2.0ghz -16 -14 -12 -10 -8 -6 -4 -2 0 1 1.2 1.4 1.6 1.8 2 2.2 freq(ghz) return loss (db) 3w 4w 5w
gan hemt power transistor 100w peak, 1.2 - 2.0 ghz magx - 001220 - 100l00 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. production v1 19 sept 11 test fixture circuit dimensions test fixture assembly note: a .dwg circuit drawing is available upon request
gan hemt power transistor 100w peak, 1.2 - 2.0 ghz magx - 001220 - 100l00 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. production v1 19 sept 11 outline drawings outline drawings turning the device on 1. set v gs to the pinch - off (v p ), typically - 5v 2. turn on v ds to nominal voltage (50v) 3. increase v gs until the i ds current is reached 4. apply rf power to desired level turning the device off 1. turn the rf power off 2. decrease v gs down to v p 3. decrease v ds down to 0v 4. turn off v gs correct device bias sequencing
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